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Part of a silicon wafer with laser cut structures

Copyright of ©2006 Fraunhofer Institute IWS Dresden
Copyright of ©2006 Fraunhofer Institute IWS Dresden
Copyright of ©2006 Fraunhofer Institute IWS Dresden

The heart of the laser micromachining centre used to cut this component is a Q-switched and diode-pumped solid state laser with frequency tripling. The unit is a stable and low-maintenance industrial laser of the type GATOR UV with the following beam parameters: - Wavelength 355 nm - Repetition frequency 10 kHz - Pulse length 15 ns - Average power 3 W - Beam quality close to TEM00. The machine is equipped with a UV scanner and plane field optics with a working area of 100 · 100 mm2. The high beam quality makes it possible to generate cutting groove widths of 16 m at a wafer thickness of 220 m. The cutting process can be described as sublimation cutting because cutting of silicon does not generate much melt. Accretions of silicon oxide can be easily removed in an ultrasonic bath. The figures 1 2a and 2b show structures that have been cut out of silicon. For further details see ’Micro cutting and drilling with ultra-violet laser light’. [link to IWS_info_84e.pdf]



 

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Copyright of ©2006 Fraunhofer Institute IWS Dresden
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